H+ and D+ associated charge buildup during annealing of Si/SiO2/Si structures
H+ and D+ associated charge buildup during annealing of Si/SiO2/Si structures
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Si/SiO2/Si 结构退火过程中 H 和 D 相关电荷积累
DOI：
10.1016/s0022-3093(97)00178-6
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
R. Devine
中科院分区：
文献类型：
--
作者：
K. Vanheusden;W. L. Warren;R. Devine
通过高温处理产生的Si/SiO2/Si结构在含有合成气体（5%H2，95%N2或5%D2，95%N2）的气氛中在200-900°C的温度范围内退火。当温度≥ 500°C时，观察到SiO2层中自发的正电荷。电子和空穴注入实验证实，充电不是由于空穴，但必须归因于质子或氘核。静态和移动的物质的形成取决于样品结构的受限（Si/SiO2/Si）或非受限（SiO2/Si）性质。施加105 V cm-1的电场会导致移动的离子运动，估计氘核和质子的活化能均为0.81 ± 0.02 eV。证明了质子比氘核具有更大的移动的的结论。带电现象的物理起源是由于在Si/SiO2界面附近的应变Si <$O <$Si键中H或D与氧形成过配位氧原子，正电荷态通过向Si导带丢失一个电子而稳定。据推测，强结合的过配位氧的界面附近构成的固定的氧化物电荷物种，而更弱的结合形式迁移的Si移动的物种从Si O Si单元。
Si/SiO2/Si structures produced by high temperature processing have been annealed in atmospheres containing forming gas (5% H2, 95% N2or 5% D2, 95% N2) at temperatures in the range 200–900°C. For temperatures ≥ 500°C spontaneous positive electrical charging in the SiO2layer is observed. Electron and hole injection experiments confirm that the charging is not due to holes but must be attributed to protons or deuterons. Both static and mobile species are formed dependent upon the confined (Si/SiO2/Si) or unconfined (SiO2/Si) nature of the structure of the sample. Application of an electric field ∼ 105V cm−1results in motion of the mobile ions with an activation energy estimated to be 0.81 ± 0.02 eV both for deuterons and protons. A √mass factor is evidenced resulting in the conclusion that the protons are more mobile than the deuterons. The physical origin of the charging phenomenon is attributed to the formation of overcoordinated oxygen atoms with the H or D attaching themselves to oxygens in strained SiOSi bonds near the Si/SiO2interface, the positive chargeds state is stabilised by loss of an electron to the Si conduction band. It is assumed that strongly bound overcoordinated oxygens near the interface constitute the fixed oxide charge species while more weakly bound forms migrating from SiOSi unit to SiOSi unit are the origin of the mobile species.