Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes
Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes
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DOI：
10.1002/pssr.200903204
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发表时间：
2009-10-01
影响因子：
2.8
通讯作者：
Nakano, Yoshitaka
中科院分区：
文献类型：
--
作者：
Irokawa, Yoshihiro;Matsuki, Nobuyuki;Nakano, Yoshitaka
利用低频电容-电压（C-V）技术研究了氢与Pt-AlGaN/GaN肖特基势垒二极管（SBD）的相互作用。在1 kHz的频率下，氢中的C-V曲线与氮中的C-V曲线相比向负偏压值移动。随着频率从1 kHz降低到1Hz，氢中的电容显著增加，并且观察到电容的振荡。这些C-V特性是相当反常的，尚未报道，这表明形成的界面极化，这可能是由于氢相关的偶极子。电容的振荡可能与偶极子的对准有关。(C)2009 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆
We have investigated the interaction of hydrogen with Pt-AlGaN/GaN Schottky barrier diodes (SBDs) using a low-frequency capacitance-voltage (C-V) technique. At a frequency of 1 kHz, the C-V curve in hydrogen shifts toward negative bias values as compared with that in nitrogen. As the frequency decreases from 1 kHz to 1 Hz, the capacitance in hydrogen significantly increases and an oscillation of the capacitance is observed. These C-V characteristics are quite anomalous and have not been reported yet, suggesting the formation of an interfacial polarization which could be attributable to hydrogen-related dipoles. The oscillation of the capacitance may be related to the alignment of the dipoles. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim