Design of a CMOS oscillator with magnetic-field frequency modulation
Design of a CMOS oscillator with magnetic-field frequency modulation
复制标题
磁场频率调制CMOS振荡器的设计
DOI：
10.1109/jssc.1987.1052707
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发表时间：
1987
影响因子：
5.4
通讯作者：
H. Baltes
中科院分区：
文献类型：
--
作者：
A. Nathan;I. McKay;I. Filanovsky;H. Baltes
描述了一种在单芯片上集成了电流控制振荡器的磁敏 n 沟道分裂漏极 MOSFET (MAGFET)。这种磁控振荡器 (MCO) 采用 5-/spl mu/m CMOS 技术制造，对垂直于芯片表面的磁场敏感。 MCO 的输出是方波，其频率随磁输入信号线性变化并受磁输入信号的调制。
A magnetosensitive n-channel split-drain MOSFET (MAGFET) integrated with a current-controlled oscillator on a single chip is described. This magnetically controlled oscillator (MCO), which was fabricated in 5-/spl mu/m CMOS technology, is sensitive to magnetic fields perpendicular to the chip surface. The output of the MCO is a square wave whose frequency varies linearly with, and is modulated by, the magnetic input signal.