Monolithic Integration of Surface Plasmon Detector and Metal-Oxide-Semiconductor Field-Effect Transistors
Monolithic Integration of Surface Plasmon Detector and Metal-Oxide-Semiconductor Field-Effect Transistors
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表面等离子体探测器和金属氧化物半导体场效应晶体管的单片集成
DOI：
10.1109/jphot.2013.2272779
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发表时间：
2013
影响因子：
2.4
通讯作者：
and Mitsuo Fukuda
中科院分区：
文献类型：
--
作者：
Takuma Aihara;Masashi Fukuhara;Ayumi Takeda;Byounghyun Lim;Masato Futagawa;Yuya Ishii;Kazuaki Sawada;and Mitsuo Fukuda
介绍了硅基等离子体探测器与金属氧化物半导体场效应晶体管(MOSFET)的单片集成。等离子体探测器由硅衬底上的金膜和纳米光栅组成，工作在1550 nm的自由空间波长。利用时域有限差分法对纳米级光栅阵的结构进行了优化。利用单片集成的MOSFET，等离子体探测器的输出电流放大了约14000倍。此外，通过调制入射到等离子体探测器的光束的强度来演示集成电路的动态运行。
The monolithic integration of a silicon-based plasmonic detector with metal- oxide-semiconductor field-effect transistors (MOSFETs) was demonstrated. The plasmonic detector consisted of a gold film with a nanoslit grating on a silicon substrate and was operated at a free-space wavelength of 1550 nm. The structure of the nanoslit grating was optimized by using the finite-difference time-domain method. The output current from the plasmonic detector was amplified by ~14 000 times using the monolithically integrated MOSFETs. In addition, dynamic operation of the integrated circuit was demonstrated by modulation of the intensity of a beam that was incident to the plasmonic detector.