Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures
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DOI：
10.1038/nnano.2014.187
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发表时间：
2014-10-01
影响因子：
38.3
通讯作者：
Novoselov, K. S.
中科院分区：
文献类型：
--
作者：
Mishchenko, A.;Tu, J. S.;Novoselov, K. S.
由二维原子晶体（3,4）制成的范德华异质结构（1,2）技术的最新发展已经导致了新的物理现象的观察，如金属-绝缘体跃迁和库仑拖拽，并实现了功能器件，如隧道二极管（7,8）、隧道晶体管（9,10）和光伏传感器（11）。前所未有的电子性能控制不仅可以通过选择堆叠中的材料（12），还可以通过调整组件层的内置应变和相对方向来实现额外的微调（13-17）。在这里，我们展示了在晶体管器件中，由六方氮化硼层分隔的两个石墨烯电极的晶体取向如何仔细排列，可以实现共振隧道，同时保持电子能量、动量和潜在的手性。我们展示了器件特性中的共振峰和负差分电导如何诱导可调谐射频振荡电流，这对未来的高频技术具有潜力。
Recent developments in the technology of van der Waals heterostructures(1,2) made from two-dimensional atomic crystals(3,4) have already led to the observation of new physical phenomena, such as the metal-insulator transitions and Coulomb drags, and to the realization of functional devices, such as tunnel diodes(7,8), tunnel transistors(9,10) and photovoltaic sensors(11). An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack(12), but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers(13-17). Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes separated by a layer of hexagonal boron nitride in a transistor device can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induce a tunable radiofrequency oscillatory current that has potential for future high-frequency technology.