AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation
AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation
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DOI：
10.7567/jjap.55.070101
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发表时间：
2016-06
影响因子：
1.5
通讯作者：
M. Kuzuhara;J. Asubar;H. Tokuda
中科院分区：
文献类型：
--
作者：
M. Kuzuhara;J. Asubar;H. Tokuda
在本文中，我们概述了为电力电子领域主流接受而开发的基于 GaN 的高电子迁移率晶体管 (HEMT) 的最新进展。对在独立式半绝缘 GaN 衬底上制造的 AlGaN/GaN HEMT 的全面研究表明，提取的约 1 MV/cm 的有效横向击穿场可能受到由于 GaN 缓冲层和/或 GaN 衬底本身的结构和电质量不足而导致的过早器件击穿的限制。通过使用通过重度 Fe 掺杂实现的高电阻 GaN 衬底，有效横向击穿场增加至 2 MV/cm。本文后半部分还讨论了与电流崩塌相关的各种问题，通过结合两种不同的方案（即预钝化氧等离子体处理和场板结构）来增强电流崩塌的缓解效果，从而更显着地减少电流崩塌。最后，通过在 AlGaN/GaN HEMT 中引入三维场板（3DFP），提出了一种抑制电流塌陷的新方法，并描述了其实现真正无塌陷操作的可能性。
In this paper, we give an overview of the recent progress in GaN-based high-electron-mobility transistors (HEMTs) developed for mainstream acceptance in the power electronics field. The comprehensive investigation of AlGaN/GaN HEMTs fabricated on a free-standing semi-insulating GaN substrate reveals that an extracted effective lateral breakdown field of approximately 1 MV/cm is likely limited by the premature device breakdown originating from the insufficient structural and electrical quality of GaN buffer layers and/or the GaN substrate itself. The effective lateral breakdown field is increased to 2 MV/cm by using a highly resistive GaN substrate achieved by heavy Fe doping. Various issues relevant to current collapse are also discussed in the latter half of this paper, where a more pronounced reduction in current collapse is achieved by combining two different schemes (i.e., a prepassivation oxygen plasma treatment and a field plate structure) for intensifying the mitigating effect against current collapse. Finally, a novel approach to suppress current collapse is presented by introducing a three-dimensional field plate (3DFP) in AlGaN/GaN HEMTs, and its possibility of realizing true collapse-free operation is described.