Direct observations of thermally induced structural changes in amorphous silicon carbide
Direct observations of thermally induced structural changes in amorphous silicon carbide
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DOI：
10.1063/1.2960342
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发表时间：
2008-08-01
影响因子：
3.2
通讯作者：
Weber, William J.
中科院分区：
文献类型：
--
作者：
Ishimaru, Manabu;Hirata, Akihiko;Weber, William J.
用透射电子显微镜（TEM）原位观察了非晶碳化硅（SiC）的热致结构弛豫。采用高能离子束辐照法在4 H-SiC单晶衬底上制备了非晶SiC。横截面TEM观察和电子能量损失谱测量表明，热退火诱导显着的体积减小，所谓的致密化，非晶SiC。从径向分布函数分析，使用电子衍射，显着的变化与结构弛豫观察到化学短程顺序。据证实，原位TEM研究观察到的结构变化同意定性与散装材料。从化学短程有序的改变出发，讨论了非晶SiC热致致密化的起源。(C)2008年美国物理学会。
Thermally induced structural relaxation in amorphous silicon carbide (SiC) has been examined by means of in situ transmission electron microscopy (TEM). The amorphous SiC was prepared by high-energy ion beam irradiation into a single crystalline 4H-SiC substrate. Cross-sectional TEM observations and electron energy-loss spectroscopy measurements revealed that thermal annealing induces a remarkable volume reduction, so-called densification, of amorphous SiC. From radial distribution function analyses using electron diffraction, notable changes associated with structural relaxation were observed in chemical short-range order. It was confirmed that the structural changes observed by the in situ TEM study agree qualitatively with those of the bulk material. On the basis of the alteration of chemical short-range order, we discuss the origin of thermally induced densification in amorphous SiC. (C) 2008 American Institute of Physics.