Actual information storage with a recording density of 4 Tbit∕in. in a ferroelectric recording medium.
Actual information storage with a recording density of 4 Tbit∕in. in a ferroelectric recording medium.
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DOI：
10.1063/1.3463470
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发表时间：
2010-08
影响因子：
4
通讯作者：
K. Tanaka;Yasuo Cho
中科院分区：
文献类型：
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作者：
K. Tanaka;Yasuo Cho
一种实现密度大于1tb∕in的真实信息记录的新方法。(2)在铁电数据存储系统中的应用。该系统以偏振方向的形式写入数据位，并通过扫描非线性介电显微镜技术读取数据。比较了初始介质和反向预极化介质的畴开关特性，优化了写入脉冲电压的条件。结果，包含64×64位元的实际数据以4 Tbit∕in的面密度记录(2)。误码率计算为1.2×10（-2）。
A new method to achieve real information recording with a density above 1 Tbit∕in.(2) in ferroelectric data storage systems is proposed. In this system, data bits were written in the form of the polarization direction, and the data were read by scanning nonlinear dielectric microscopy technique. The domain-switching characteristics of the virgin and inversely prepolarized media were compared, and the conditions of the pulse voltage for writing were optimized. As a result, actual data containing 64×64 bits were recorded at an areal density of 4 Tbit∕in.(2). The bit error rate was evaluated to be 1.2×10(-2).