Ultraviolet-sensitive field-effect transistor utilized amorphous thin films of organic donor/acceptor dyad
Ultraviolet-sensitive field-effect transistor utilized amorphous thin films of organic donor/acceptor dyad
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DOI：
10.1063/1.2720743
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发表时间：
2007-04
影响因子：
4
通讯作者：
T. Saragi;Robert Pudzich;T. Fuhrmann-Lieker;J. Salbeck
中科院分区：
文献类型：
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作者：
T. Saragi;Robert Pudzich;T. Fuhrmann-Lieker;J. Salbeck
报道了一种基于有机给体/受体二元体非晶薄膜的高响应紫外敏感场效应晶体管。对于370 nm的紫外光，最佳响应度可达6.5A scinW。还可以获得高达4.3×103的光电流与暗电流之比。其机理可以用超快光诱导的受体和供体分子内电荷转移来充分解释。这一结果为有机半导体作为紫外探测器的活性材料提供了潜在的应用。
The authors report on highly responsive ultraviolet (UV)-sensitive field-effect transistor based on amorphous thin films of organic donor/acceptor dyad. An optimal responsivity of up to 6.5A∕W can be obtained for UV light at 370nm. High ratios of photocurrent to dark current of up to 4.3×103 can also be obtained. The underlying mechanism can be sufficiently explained by ultrafast photoinduced intramolecular charge transfer between the acceptor and the donor. This result offers a potential application of organic semiconductors as active materials for UV detectors.