Anomalous rectification in a purely electronic memristor
Anomalous rectification in a purely electronic memristor
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DOI：
10.1063/1.4963887
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发表时间：
2016-10
影响因子：
4
通讯作者：
Jingrui Wang;Ruobing Pan;H. Cao;Yang Wang;L. Liang;Hongliang Zhang;Junhua Gao;F. Zhuge
中科院分区：
文献类型：
--
作者：
Jingrui Wang;Ruobing Pan;H. Cao;Yang Wang;L. Liang;Hongliang Zhang;Junhua Gao;F. Zhuge
在纯电子记忆器件中观察到了反常整流现象。这可能是由于(1)在氧化锌/铂界面处的欧姆或准欧姆接触和(2)在钛/氧化锌界面处的肖特基接触。欧姆接触来源于整个薄膜中的氧化锌还原，而不是仅仅发生在钛/氧化锌界面。肖特基接触可能来自于纳米多孔氧化锌中吸附的水分。电铸器件的导通受陷阱位载流子捕获/脱陷控制，整流效果较差，非线性较高。此外，还实现了互补的阻性开关。
An anomalous rectification was observed in a purely electronic memristive device Ti/ZnO/Pt. It could be due to (1) an Ohmic or quasi-Ohmic contact at the ZnO/Pt interface and (2) a Schottky contact at the Ti/ZnO interface. The Ohmic contact originates from the reduction of ZnO occurring in the whole film instead of only at the Ti/ZnO interface. The Schottky contact may come from moisture adsorbed in the nanoporous ZnO. The conduction in the electroformed device is controlled by the carrier trapping/detrapping of the trap sites, inducing a poor rectification and high nonlinearity. Furthermore, a complementary resistive switching was achieved.