Improved ferroelectric properties in multiferroic BiFeO3 thin films through La and Nb codoping
Improved ferroelectric properties in multiferroic BiFeO3 thin films through La and Nb codoping
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DOI：
10.1103/physrevb.77.092101
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发表时间：
2008-03-01
影响因子：
3.7
通讯作者：
Ozawa, Kiyoshi
中科院分区：
文献类型：
--
作者：
Cheng, Zhenxiang;Wang, Xiaolin;Ozawa, Kiyoshi
我们报道了通过Nb掺杂控制电泄漏而显著改善BiFeO3薄膜的铁电性能。在Pt/Ti/SiO2/Si衬底上制备的Bi0.8La0.2Nb0.01Fe0.99O3薄膜的残余电极化值高达80 μ C/cm(2)。电介质测量证实了铌的掺杂对降低BiFeO3中氧空位引起的可动电荷密度的作用。在Nb和La共掺杂的BiFeO3薄膜中观察到很小的损耗。在铁电性能得到改善的同时，镧的掺入也提高了材料的磁矩。
We report the significant improvement of the ferroelectric properties of BiFeO3 thin film through control of electrical leakage by Nb doping. A very large remanent electrical polarization value of 80 mu C/cm(2) was observed in Bi0.8La0.2Nb0.01Fe0.99O3 thin film on Pt/Ti/SiO2/Si substrate. The doping effect of Nb in reducing the movable charge density due to oxygen vacancies in BiFeO3 was confirmed by the dielectric measurements. A very small loss was observed in the Nb and La codoped BiFeO3 thin film. As well as the improvement in the ferroelectric properties, the magnetic moment was also enhanced due to the doping of La.