f Electron Contribution to the Change of Electronic Structure in CeRu2Si2 with Temperature: A Compton Scattering Study
f Electron Contribution to the Change of Electronic Structure in CeRu2Si2 with Temperature: A Compton Scattering Study
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DOI：
10.1103/physrevlett.106.136401
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发表时间：
2011-03-28
影响因子：
8.6
通讯作者：
Sakurai, Y.
中科院分区：
文献类型：
--
作者：
Koizumi, A.;Motoyama, G.;Sakurai, Y.
在近藤温度上下测量了CeRu2Si2单晶的高分辨率康普顿谱，以阐明Ce-4f电子从局域态到流动态的变化。经过一系列的分析，得到了投影在第一布里色区的二维电子占据数密度，它清楚地说明了流动态和局域态的区别。通过与能带计算的对比，讨论了Ce-4f电子对电子结构的贡献。
High resolution Compton profiles have been measured in the single crystal of CeRu2Si2 above and below the Kondo temperature to elucidate the change of the Ce-4f electron from localized to itinerant states. Two-dimensional electron occupation number densities projected on the first Brillouin zone, which are obtained after a series of analyses, clearly specify the difference between itinerant and localized states. The contribution of Ce-4f electrons to the electronic structure is discussed by contrast with a band calculation.