Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation
Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation
复制标题
DOI：
10.1063/5.0010882
复制
发表时间：
2020-04
期刊：
影响因子：
--
通讯作者：
Jing-Hui Meng;Bin Zhao;Qiyun Xu;Jonathan M. Goodwill;J. Bain;M. Skowronski
中科院分区：
文献类型：
--
作者：
Jing-Hui Meng;Bin Zhao;Qiyun Xu;Jonathan M. Goodwill;J. Bain;M. Skowronski
基于过渡金属氧化物的阻性开关器件需要形成导电灯丝，以便该器件能够开关。这种细丝被认为是由于施加电场而使氧化物减少而形成的，但本报告试图反驳这种解释。在电形成过程中经常报道的物理变化包括电极分层、功能氧化物结晶、电极和氧化物材料的混合以及可能向环境中大量损失氧气。在这里，我们表明，大多数这些影响不是固有的形成和开关过程，而是由于一个实验伪影：在形成电路中的寄生电容放电。典型的BNC电缆的放电可以将灯丝的温度提高到2000到5000 K之间，从而导致广泛的物理变化。可以使用片上负载元件消除上述放电和相关影响，而不会影响开关的能力。
Resistive switching devices based on transition metal oxides require formation of a conductive filament in order for the device to be able to switch. Such filaments have been proposed to form by the reduction of the oxide due to application of the electric field, but this report seeks to rebut that interpretation. Frequently reported physical changes during electro-formation include delamination of electrodes, crystallization of functional oxide, intermixing of electrode and oxide materials, and extensive loss of oxygen presumably to the ambient. Here we show that most of these effects are not inherent to the formation and switching processes and instead are due to an experimental artifact: the discharge of parasitic capacitances in the forming circuit. Discharge of typical BNC cables can raise the temperature of the filament to between 2,000 and 5,000 K resulting in extensive physical changes. Discharge and associated effects mentioned above can be eliminated using an on-chip load element without affecting the ability to switch.