Dynamics of carrier tunneling and recombination in asymmetric coupled InGaN multiple quantum wells.
Dynamics of carrier tunneling and recombination in asymmetric coupled InGaN multiple quantum wells.
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DOI：
10.1364/oe.25.024745
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发表时间：
2017-10
期刊：
影响因子：
3.8
通讯作者：
G. Weng;Shaoqiang Chen;Baoping Zhang;Xiaobo Hu;S. Kuboya;K. Onabe
中科院分区：
文献类型：
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作者：
G. Weng;Shaoqiang Chen;Baoping Zhang;Xiaobo Hu;S. Kuboya;K. Onabe
在这项工作中，通过激发功率依赖和温度依赖的光致发光（PL）测量系统地研究了基于ingan的非对称耦合多量子阱（AC-MQWs）中的载流子隧穿和重组动力学。在405和325 nm不同的泵浦波长下，观察到明显不同的PL光谱演变，这可以很好地解释基于ac - mqw中禁止的1h→2e跃迁的异常载流子“反向隧穿”。通过测量的光调制反射率（PR）光谱与计算的带间跃迁能量之间的良好一致性，确定了禁止跃迁。我们的研究结果表明，通过巧妙地设计基于ingan的光电器件的MQW结构，可以实现甚至不被选择规则允许的特定带间光跃迁，从而通过常规和/或异常的“反向”载流子隧穿有效地改善qw上的载流子分布。
In this work, dynamics of carrier tunneling and recombination in InGaN-based asymmetric coupled multiple quantum wells (AC-MQWs) are systematically studied by excitation power-dependent and temperature-dependent photoluminescence (PL) measurements. With different pumping wavelengths of 405 and 325 nm, distinctly different PL spectral evolutions are observed, which could be well explained by the proposed anomalous carrier "reverse tunneling" based on the forbidden 1h→2e transitions in the AC-MQWs. The forbidden transitions are identified through the well agreement between the measured photo-modulated reflectance (PR) spectrum and the calculated interband transition energies. Our results indicate that, by ingeniously designing the MQW structure of the InGaN-based optoelectronic devices, it is possible to realize a specific interband optical transition which is even not allowed by the selection rule, and thereby effectively improve the carrier distribution across the QWs through the conventional and/or anomalous "reverse" carrier tunneling.