Exploiting the colloidal nanocrystal library to construct electronic devices
Exploiting the colloidal nanocrystal library to construct electronic devices
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DOI：
10.1126/science.aad0371
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发表时间：
2016-04-08
期刊：
影响因子：
56.9
通讯作者：
Kagan, Cherie R.
中科院分区：
文献类型：
--
作者：
Choi, Ji-Hyuk;Wang, Han;Kagan, Cherie R.
合成方法通过调整胶体的尺寸、形状和组成来产生具有可调物理性质的胶体纳米晶体库。在这里，我们利用胶体的多样性和设计的材料，界面和工艺，以构建全电子器件使用基于解决方案的过程。沉积金属银和半导体硒化镉纳米晶体以形成场效应晶体管的高导电性和高迁移率薄膜电极和沟道层。绝缘氧化铝纳米晶体与聚电解质逐层组装以形成用于低电压器件操作的高介电常数栅极绝缘体层。金属铟纳米晶体与银纳米晶体共分散，以在沉积的电极中集成铟源，其用于钝化和掺杂硒化镉沟道层。我们在柔性塑料上制造了电子迁移率为21.7平方厘米/伏秒的全电子场效应晶体管。
Synthetic methods produce libraries of colloidal nanocrystals with tunable physical properties by tailoring the nanocrystal size, shape, and composition. Here, we exploit colloidal nanocrystal diversity and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices using solution-based processes. Metallic silver and semiconducting cadmium selenide nanocrystals are deposited to form high-conductivity and high-mobility thin-film electrodes and channel layers of field-effect transistors. Insulating aluminum oxide nanocrystals are assembled layer by layer with polyelectrolytes to form high-dielectric constant gate insulator layers for low-voltage device operation. Metallic indium nanocrystals are codispersed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to passivate and dope the cadmiumselenide nanocrystal channel layer. We fabricate all-nanocrystal field-effect transistors on flexible plastics with electron mobilities of 21.7 square centimeters per volt-second.