Highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 μm by metalorganic chemical vapor deposition
Highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 μm by metalorganic chemical vapor deposition
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DOI：
10.1016/j.physe.2004.08.027
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发表时间：
2005-02-01
影响因子：
3.3
通讯作者：
Arakawa, Y
中科院分区：
文献类型：
--
作者：
Yang, T;Tatebayashi, J;Arakawa, Y
我们报道了用低压金属有机化学气相沉积方法在砷化镓衬底上生长的发射波长为1.3微米的高度均匀的InAs自组装量子点。通过优化InAs的生长速率，并以三乙基镓为源在量子点上覆盖GaAs层，我们在密度为1.7×10(10)cm(-2)的量子点上观察到了窄线宽(~lt；17 meV，7K时)。此外，我们通过依赖温度的发光测量表明，由于其高度的均匀性，量子点几乎不表现出线宽对温度的依赖关系。(C)2004爱思唯尔B.V.保留所有权利。
We report highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3 mum, grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition. By optimizing the InAs growth rate and capping the QDs with GaAs using triethylgallium as a gallium source, we demonstrate a narrow photoluminescence (PL) inhomogeneous linewidth ( < 17 meV at 7 K) from QDs with a density of 1.7 x 10(10) cm(-2). Furthermore, we show by temperature-dependent PL measurements that the QDs exhibit almost no dependence of linewidth on temperature due to their high uniformity. (C) 2004 Elsevier B.V. All rights reserved.