Pentacene organic thin-film transistors for circuit and display applications
Pentacene organic thin-film transistors for circuit and display applications
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DOI：
10.1109/16.766895
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发表时间：
1999-06-01
影响因子：
3.1
通讯作者：
Jackson, TN
中科院分区：
文献类型：
--
作者：
Klauk, H;Gundlach, DJ;Jackson, TN
我们已经制作了有机薄膜晶体管（TFT）使用的小分子多环芳烃并五苯作为活性材料。使用低温离子束沉积的二氧化硅作为栅极电介质，离子束沉积的钯用于源极和漏极接触，以及真空蒸发并五苯以形成有源层，在玻璃基板上制造器件。获得了优异的电学特性，包括载流子迁移率高达0.6 cm（2）/V-s，开/关电流比高达10（8），亚阈值斜率低至0.7 V/dec，所有记录值为非单晶衬底上制备的有机晶体管。
We have fabricated organic thin-film transistors (TFT's) using the small-molecule polycyclic aromatic hydrocarbon pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric, ion-beam deposited palladium for the source and drain contacts, and vacuum-evaporated pentacene to form the active layer. Excellent electrical characteristics were obtained, including carrier mobility as large as 0.6 cm(2)/V-s, on/off current ratio as large as 10(8), and subthreshold slope as low as 0.7 V/dec, all record values for organic transistors fabricated on nonsingle-crystal substrates.