Nanocrystalline indium oxide-doped tin oxide thin film as low temperature hydrogen sensor
Nanocrystalline indium oxide-doped tin oxide thin film as low temperature hydrogen sensor
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DOI：
10.1016/j.snb.2003.08.025
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发表时间：
2004-02-01
影响因子：
8.4
通讯作者：
Parish, C
中科院分区：
文献类型：
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作者：
Shukla, S;Seal, S;Parish, C
氢气，浓度范围为100 ppm-4 vol. %，在25和50 ℃的较低工作温度下，使用Pt溅射溶胶-凝胶浸涂纳米晶（6-7 nm）6.5 mol% In 2 O3掺杂SnO 2半导体薄膜（100-150 nm）传感器成功地感测到。典型地，对于1000 ppm的氢，在25和50 ℃下分别观察到32%和1600%的最大灵敏度值;而对于2体积%的氢，氢，在25和50 ℃下分别记录到50%和70，000%的最大灵敏度值。在25 ℃下，对于4体积%（NASA规定的爆炸极限）氢，在500 ℃和600 ℃下煅烧的Pt溅射薄膜的最大氢气灵敏度分别为107，887和2083%。(C)2003 Elsevier B. V.保留所有权利。
Hydrogen gas, within the concentration range of 100 ppm-4 vol.%, is successfully sensed at lower operating temperatures, 25 and 50degreesC, using the Pt-sputtered sol-gel dip-coated nanocrystalline (6-7 nm) 6.5 mol% In2O3-doped SnO2 semiconductor thin (100-150 nm) film sensor. Typically, for 1000 ppm of hydrogen, the maximum sensitivity values of 32 and 1600% are observed at 25 and 50degreesC, respectively; while for 2 vol.% hydrogen, the maximum sensitivity values of 50 and 70,000% are recorded at 25 and 50degreesC, respectively. At 25degreesC, for 4 vol.% (explosive limit as set by NASA) hydrogen, the maximum hydrogen gas sensitivity values of 107,887 and 2083% are observed for the Pt-sputtered thin films calcined at 500 and 600degreesC, respectively. (C) 2003 Elsevier B.V. All rights reserved.