Efficient photocatalytic activity of water oxidation over WO3/BiVO4 composite under visible light irradiation
Efficient photocatalytic activity of water oxidation over WO3/BiVO4 composite under visible light irradiation
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DOI：
10.1016/j.electacta.2008.08.058
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发表时间：
2009-01-01
影响因子：
6.6
通讯作者：
Nosaka, Yoshio
中科院分区：
文献类型：
--
作者：
Chatchai, Ponchio;Murakami, Yoshinori;Nosaka, Yoshio
以前驱体溶液为原料，采用旋涂法在IFTO衬底上沉积了WO_3/BiVO_4耦合薄膜。用原子力显微镜、扫描电子显微镜、X射线光电子能谱和X射线衍射仪对复合薄膜进行了表征。当在BiVO4层和FTO衬底之间放置一层WO_3薄膜时，BiVO_4电极的入射光子电流效率(IPCE)提高了10倍。WO_3/BiVO_4复合膜电极性能的提高主要归功于半导体异质结处有效的电子-空穴分离。提出了一种电荷转移机制来解释WO_3/BiVO_4电极表面的光电流增强。(C)2008爱思唯尔有限公司。保留所有权利。
A coupled WO3/BiVO4 thin film has been deposited on IFTO substrate by a spin coating method from precursor solutions. The composite films were characterized by AFM, SEM, XPS and XRD techniques. The incident photon to current efficiency (IPCE) of BiVO4 electrode was increased by 10 times when a WO3 film was layered between the BiVO4 layer and the FTO substrate. The enhanced performance of WO3/BiVO4 composite film electrode is mainly ascribed to the effective electron-hole separations at the semiconductor heterojunction. A schematic mechanism of charge transfer was proposed to explain the photocurrent enhancement for the WO3/BiVO4 electrode Surface. (C) 2008 Elsevier Ltd. All rights reserved.