Calibration of the photoluminescence technique for measuring concentrations of shallow dopants in Ge
Calibration of the photoluminescence technique for measuring concentrations of shallow dopants in Ge
复制标题
用于测量Ge中浅掺杂剂浓度的光致发光技术的校准
DOI：
10.1063/1.4766385
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
J. Weber
中科院分区：
文献类型：
--
作者：
M. Allardt;V. Kolkovsky;K. Irmscher;J. Weber
本文系统地研究了Al、As、B、Ga、In、P和Sb掺杂的Ge中与浅施主或受主结合的激子的光致发光。光致发光的测量结果与光热电离光谱和霍尔效应的测量结果相关联。激子的离解能满足海恩斯定律。提出了一种定标方法，它允许根据与自由激子强度相关的束缚激子强度来确定施主和受主的浓度。
A systematic study of the photoluminescence (PL) from excitons bound to shallow donors or acceptors in Al-, As-, B-, Ga-, In-, P-, and Sb-doped Ge is presented. The results of the PL measurements are correlated with those from photothermal ionization spectroscopy and Hall effect measurements. The dissociation energy of the excitons is shown to satisfy Haynes rule. A calibration is presented, which allows a determination of the donor and acceptor concentrations from their respective bound exciton intensities related to the free exciton intensity.