Observation of electronic states on Si(111)-(7 x 7) through short-range attractive force with noncontact atomic force spectroscopy
Observation of electronic states on Si(111)-(7 x 7) through short-range attractive force with noncontact atomic force spectroscopy
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DOI：
10.1103/physrevlett.93.256101
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发表时间：
2004-12-17
影响因子：
8.6
通讯作者：
Tomitori, M
中科院分区：
文献类型：
--
作者：
Arai, T;Tomitori, M
我们的实验表明，在特定的偏置电压下，Si针尖和Si（111）-（7 x7）表面之间的短程吸引力增强;我们在固定的间隔下，通过改变偏置电压，基于非接触式原子力显微镜进行力谱。光谱表现出突出的峰值和宽峰，这是由于量子力学共振的样品表面态的能级被调谐到那些通过移动费米能级通过改变偏置电压的尖端状态，和共振态降低隧道势垒，分别。
We experimentally reveal that the short-range attractive force between a Si tip and a Si(111)-(7x7) surface is enhanced at specified bias voltages; we conduct force spectroscopy based on noncontact atomic force microscopy with changing bias voltage at a fixed separation. The spectra exhibit prominent peaks and a broad peak, which are attributed to quantum mechanical resonance as the energy levels of sample surface states are tuned to those of the tip states by shifting the Fermi level through changing bias voltage, and to the resonating states over a lowered tunneling barrier, respectively.