High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films
High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films
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DOI：
10.7567/jjap.56.06gf08
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发表时间：
2017-06-01
影响因子：
1.5
通讯作者：
Cheng, Huang-Chung
中科院分区：
文献类型：
--
作者：
Liao, Chan-Yu;Huang, Ching-Yu;Cheng, Huang-Chung
采用准分子激光晶化（ELC）和反向掺杂（CD）技术制备了高性能的轻掺杂锗薄膜晶体管（TFT）。采用超侧向生长的ELC和1 × 10 ~（13）cm ~（-2）或更高剂量的CD制备了晶粒尺寸为1 μ m的高质量n型Ge薄膜。结果表明，采用ELC（300 mJ/cm ~ 2）和CD（1 × 10 ~（13）cm ~（-2））工艺制备的沟道宽和长均为0.5 μ m的p沟道Ge TFT，其上级场效应迁移率为271 cm ~（2）V ~（-1）s ~（-1），开/关电流比为2.7 × 10 ~（-3）。研究了ELC条件和CD剂量对p沟道Ge TFT电学特性的影响。(C)2017日本应用物理学会。
High-performance polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) fabricated with lightly doped Ge thin films by excimer laser crystallization (ELC) and counter doping (CD) have been demonstrated. High-quality n-type Ge thin films with a grain size as large as 1 mu m were fabricated by ELC in the super lateral-growth regime and CD at a dose of 1 x 10(13) cm(-2) or higher. Consequently, a superior field-effect mobility of 271cm(2)V(-1)s(-1) and a high on/off current ratio of 2.7 x 10(3) have been obtained for p-channel Ge TFTs with the channel width and length of both 0.5 mu m fabricated by ELC at 300mJ/cm(2) and CD at a dose of 1 x 10(13)cm(-2). The effects of ELC conditions and CD dose on the electrical characteristics of p-channel Ge TFTs were also investigated. (C) 2017 The Japan Society of Applied Physics.