Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio
Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio
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使用低 V/III 摩尔比的低压 MOVPE 在 GaAs (100) 衬底上高温生长闪锌矿 GaN
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
Hidenao Tanaka
中科院分区：
文献类型：
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作者：
A. Nakadaira;Hidenao Tanaka
采用三甲基镓或三乙基镓和NH3为原料，在GaAs（100）衬底上用低压金属有机气相外延法生长了Zn掺杂的GaN薄膜。在较低温度下生长的膜含有相当数量的碳，但在高温生长中碳浓度降低。当使用三乙基镓和NH3在950°C下生长薄膜时，其碳浓度约为1017 cm−3。锌掺杂GaN晶体的结晶和光学质量也随着使用薄缓冲层在低V/III比下的高温生长而改善。该薄膜在室温下只有一个尖锐的光致发光峰在3.20 eV的半高宽低至70 meV。
Zinc-blende GaN films were grown on GaAs (100) substrates by low-pressure metalorganic vapor phase epitaxy using trimethylgallium or triethylgallium and NH3. Films grown at lower temperatures contained considerable amounts of carbon, but the carbon concentration was reduced in high temperature growth. When the film was grown at 950°C using triethylgallium and NH3, its carbon concentration was on the order of 1017 cm−3. The crystalline and optical quality of zinc-blende GaN crystal also improved with high-temperature growth at a low V/III ratio using a thin buffer layer. The films exhibited only one sharp photoluminescence peak at 3.20 eV with a full width at half maximum as low as 70 meV at room temperature.