Probing Diffusion Kinetics with Secondary Ion Mass Spectrometry
Probing Diffusion Kinetics with Secondary Ion Mass Spectrometry
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DOI：
10.1557/mrs2009.212
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发表时间：
2009-12-01
期刊：
影响因子：
5
通讯作者：
Martin, Manfred
中科院分区：
文献类型：
--
作者：
De Souza, Roger A.;Martin, Manfred
二次离子质谱仪(SIMS)是一种用于测定固体中元素和同位素分布的强大分析技术。它对固态离子电子学领域的研究人员的主要吸引力之一是它能够区分同一化学元素的同位素作为固体中位置的函数。利用富含的稳定同位素作为扩散源，可以研究固体中的自扩散动力学。在这篇文章中，我们以氧同位素在氧化物中的扩散为主要例子，介绍了标准的实验方法，并随后讨论了几个有前途的发展，特别是薄膜几何结构提供的机会，以及非均匀系统的研究，包括可能沿晶界快速扩散和使界面上的空间电荷层“可见”。这些例子表明，SIMS能够探测从几纳米到数百微米范围内的各种长度尺度的质量传输过程。
Secondary ion mass spectrometry (SIMS) is a powerful analytical technique for determining elemental and isotopic distributions in solids. One of its main attractions to researchers in the field of solid-state ionics is its ability to distinguish between isotopes of the same chemical element as a function of position in a solid. With enriched stable isotopes as diffusion sources, this allows self-diffusion kinetics in solids to be studied. In this article, taking oxygen isotope diffusion in oxides as our main example, we present the standard experimental method, and, subsequently, we discuss several promising developments, in particular the opportunities offered by thin-film geometries, and the investigation of inhomogeneous systems, including possible fast diffusion along grain boundaries and making space-charge layers at interfaces "visible." These examples demonstrate that SIMS is capable of probing mass transport processes over various length scales, ranging from some nanometers to hundreds of micrometers.