Numerical Analysis of Allowable Current Density for Electromigration of Interconnect Tree Structure with Reservoir
Numerical Analysis of Allowable Current Density for Electromigration of Interconnect Tree Structure with Reservoir
复制标题
带储层互连树结构电迁移允许电流密度的数值分析
DOI：
10.1115/ipack2015-48744
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
K. Sasagawa
中科院分区：
文献类型：
--
作者：
K. Fujisaki;H. Narita;K. Sasagawa
高电流密度会引起集成电路中用于电线的金属线的电迁移。电磁在线材中形成的空洞增大导致线材失效。近年来，多电平互连被广泛应用于电子器件和微机电系统的电路中。在多层互连中，上层和下层对齐的金属线通过过孔连接。为防止电磁损伤，储层结构常采用线状结构。有一个阈值电流密度与过孔互连中线路的电磁损伤有关。为确定线路的允许电流，评估阈值是很重要的。本文采用高电流密度下线材中原子密度分布的数值模拟方法，对几种与储层互连的树形结构金属线材的电磁风险进行了评估。考虑储层位置和采油树内电流流动模式，计算了导致电磁损伤的电流密度阈值。
The high current density induces electromigration (EM) in metal lines used for electric wirings in integrated circuits. The growth of voids formed by EM in the line material leads to the line failure. Recently, multilevel interconnections are widely used in the circuit in electronics devices and MEMS. Metal lines aligned on upper and lower layer are connecting through the vias in the multilevel interconnections. The reservoir structure is often constructed in the line structure to prevent the EM damages. There is a threshold current density relating to the EM damage of the lines in the interconnection with vias. It is important to evaluate the threshold value for determination of an allowable electric current of the line. In this study, a numerical simulation technique for analyzing the atomic density distributions in the line material under high current density was used to evaluate the EM risks of metal lines in the several cases of interconnect tree structure with reservoir. The thresholds of current density leading to EM damage were calculated in the simulations considering the reservoir locations and pattern of electric current flow in the tree.