Degradation of GMR and TMR recording heads using very-short-duration ESD transients
Degradation of GMR and TMR recording heads using very-short-duration ESD transients
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DOI：
10.1109/tmag.2002.802803
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发表时间：
2002-09-01
影响因子：
2.1
通讯作者：
Wallash, A
中科院分区：
文献类型：
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作者：
Baril, L;Nichols, M;Wallash, A
首次报道了使用直接带电器件模型(D-CDM)测试仪对巨磁阻(GMR)和隧道磁阻(TMR)记录头进行静电放电(ESD)测试的结果。D-CDM旨在复制金属对金属接触放电产生的ESD事件，该事件发生在带电组件以不同的静电势向另一物体放电时。这种放电通过非常短的接地路径，相当于极快(<；1 ns宽)的高幅度电流瞬变。D-CDM测试仪通过首先对设备本身充电，然后用汞继电器将设备接地来产生瞬变电流。在GMR记录头上使用准静态测试仪(QST)进行了ESD测试。在每次ESD事件后记录阻力、幅度、不对称性和转移曲线。D-CDM物理失效电压(4-5V)远低于人体模型(HBM)的失效电压(25-30V)。磁故障阈值甚至可以更低。我们还报告了TMR记录头上的一些D-CDM损坏。
Electrostatic discharge (ESD) testing results for giant magnetoresistive (GMR) and tunneling magnetoresistive (TMR) recording heads using a direct charged device model (D-CDM) tester are reported for the first time. The D-CDM is intended to replicate the ESD event produced by metal-to-metal contact discharge that occurs as a charged component discharges to another object at a different electrostatic potential. This discharge, through a very short path to ground, corresponds to an extremely fast (< 1 ns wide), high-amplitude current transient.The D-CDM tester produces a transient by first charging the device itself and then grounding the device with a mercury relay. The ESD testing was done in situ with a quasi-static tester (QST) on GMR recording heads. Resistance, amplitude, asymmetry, and transfer curves were recorded after each ESD event. D-CDM physical failure voltages are much lower (4-5 V) than the ones obtained with the human body model (HBM) (25-30 V). Magnetic failure threshold can be even lower. We also report some D-CDM damage on TMR recording heads.