NITROGEN-RICH TITANIUM NITRIDE SERVING as Pt-Al DIFFUSION BARRIER FOR FeRAM APPLICATION
NITROGEN-RICH TITANIUM NITRIDE SERVING as Pt-Al DIFFUSION BARRIER FOR FeRAM APPLICATION
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DOI：
10.1080/10584580802074025
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发表时间：
2008-06
影响因子：
0.7
通讯作者：
K. Xue;T. Ren;D. Xie;Ze Jia;Ming-ming Zhang;Litian Liu
中科院分区：
文献类型：
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作者：
K. Xue;T. Ren;D. Xie;Ze Jia;Ming-ming Zhang;Litian Liu
摘要采用反应溅射法制备了富氮化钛薄膜。不同的是，在反应室中只引入了N2。得到的薄膜显示氮化钛（111）和（200）峰，钛氮比为1:8 .8。在450℃成形气体退火过程中，将富氮化钛层应用于Pt-Al界面，阻止了Al向Pt扩散。Al/ tinx /Pt多层结构的接触电阻足够低，适合集成电路应用。虽然富氮化钛的制备工艺简单，但它仍然是一种良好的扩散屏障。
ABSTRACT Nitrogen-rich titanium nitride thin films are prepared by reactive sputtering using a Ti target. Distinctively, there is only N2 introduced in the reaction chamber. The obtained thin films show (111) and (200) peaks of titanium nitride, with a titanium to nitrogen ratio of 1:1.8. When applied into Pt-Al interface, such a nitrogen-rich titanium nitride layer has prevented the diffusion of Al into Pt during 450°C forming gas annealing. The contact resistance of Al/TiN x /Pt multi-structure is low enough for integrated circuit applications. While the fabrication technique of nitrogen-rich titanium nitride is simple, it still serves as a good diffusion barrier.