Passively Q-switched 1.34- mum Nd:YVO(4) microchip laser with semiconductor saturable-absorber mirrors.

Passively Q-switched 1.34- mum Nd:YVO(4) microchip laser with semiconductor saturable-absorber mirrors.
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DOI：
10.1364/ol.22.000991
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发表时间：
1997-07
期刊：
Optics letters
影响因子：
3.6
通讯作者：
R. Fluck;B. Braun;E. Gini;H. Melchior;U. Keller
R. Fluck;B. Braun;E. Gini;H. Melchior;U. Keller
中科院分区：
物理与天体物理2区
文献类型：
--
作者：
R. Fluck;B. Braun;E. Gini;H. Melchior;U. Keller

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本文报道了被动调Q二极管泵浦的1.34微米Nd：YVO（4）微片激光器。我们采用InGaAsP半导体可饱和吸收镜获得了单频230 ps脉冲。通过改变可饱和吸收体的设计参数、晶体的厚度和泵浦功率，我们可以分别在230 ps ~ 12 ns和30 kHz ~ 4 MHz范围内改变脉冲宽度和重复频率。
We demonstrate a passively Q -switched diode-pumped 1.34- microm Nd:YVO(4) microchip laser. We achieved single-frequency, 230-ps pulses by using an InGaAsP semiconductor saturable-absorber mirror. We can vary the pulse width and the repetition rate from 230ps to 12ns and from 30 kHz to 4 MHz, respectively, by changing the design parameters of the saturable absorber, the thickness of the crystal, and the pump power.