Controlling microstructure and electrochemical performance of TiO2 film by defect engineering
Controlling microstructure and electrochemical performance of TiO2 film by defect engineering
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通过缺陷工程控制 TiO2 薄膜的微观结构和电化学性能
DOI：
10.1016/j.ceramint.2019.10.294
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发表时间：
--
影响因子：
5.2
通讯作者：
xiaohua Yu
中科院分区：
文献类型：
--
作者：
Zhitong Hu;Ju Rong;zhaolin Zhan;xiaohua Yu
TiO 2薄膜的结构对其电化学性能有着重要的影响。改善薄膜结构已成为提高TiO 2电化学性能的重要手段。高质量TiO 2薄膜的生长对于耐腐蚀性或光电子应用极其重要;然而，使用传统方法具有相当大的挑战性。在此，我们报告了一种基于缺陷工程的新型控制方法。结果表明，薄膜厚度在155 ~ 998 nm范围内可调，通过调节机械激活时间可以控制缺陷浓度。高活性阳极氧化后的纯钛具有最高的堆积性和耐蚀性，这可能是由于机械活化产生的吉布斯自由能增加了缺陷浓度和反应速率常数，促进了不稳定的Ti 3+和Ti 2+向稳定的Ti 4+的转变。我们的发现为制备TiO 2薄膜提供了一种有效的方法，为进一步研究表面界面反应提供了理论支持。
TiO2 film structure has a significant impact on its electrochemical performance. Improving the film structure has become an important means to promote the electrochemical performance of TiO2. Growth of high quality TiO2 film is extremely important for corrosion resistance or optoelectronics applications; however, it is considerable challenging using conventional methods. Herein, we report on a novel control method based on the defect engineering. The results show that the defect concentration is controlled by adjusting the mechanical activation time with tunable film thickness from 155nm to 998nm. Moreover, the pure titanium with high activity anodizeddisplaythebesthighcrystallinityandcorrosionresistanceprobablyduetotheGibbsfreeenergyeducedby mechanical activation, which increased the defect concentration and reaction rate constant, and promoted the transition of unstable Ti3+ and Ti2+ to stable Ti4+. Our findings provide an effective method for the fabrication of TiO2 films, which can pave the way to further provide theoretical support for surface interfacial reactions..