Band alignment of III-N, ZnO and II-IV-N2 semiconductors from the electron affinity rule
Band alignment of III-N, ZnO and II-IV-N2 semiconductors from the electron affinity rule
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DOI：
10.1088/1361-6463/ab4baa
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发表时间：
2020-01-02
影响因子：
3.4
通讯作者：
Lambrecht, Walter R. L.
中科院分区：
文献类型：
--
作者：
Lyu, Sai;Lambrecht, Walter R. L.
用电子亲和势的第一性原理表面计算方法确定了各种II-IV-N-2和III-N与氧化锌半导体之间的自然能带排列。虽然它们忽略了特定的界面偶极子形成和应变效应，但它们为构建涉及这一材料家族的异质结器件提供了第一个指导。
The natural band alignment between various II-IV-N-2 and III-N and ZnO semiconductors are determined by means of first-principles surface calculations of their electron affinities. While these ignore specific interface dipole formation and strain effects, they provide a first guidance to the construction of heterojunction devices involving this family of materials.