The characteristic and switching strategies of SiC MOSFET assisted Si IGBT hybrid switch
The characteristic and switching strategies of SiC MOSFET assisted Si IGBT hybrid switch
复制标题
SiC MOSFET辅助Si IGBT混合开关的特性及开关策略
DOI：
--
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Chaohui Zhao
中科院分区：
文献类型：
--
作者：
Haihong Qin;Dan Wang;Y. Zhang;Dafeng Fu;Chaohui Zhao
最近出现的碳化硅器件为提高功率转换器效率和功率密度提供了一个有前途的解决方案。然而，昂贵的成本限制了SiC器件的广泛应用。本文介绍了SiC MOSFET和Si IGBT的并联，利用这两种器件的优点，提出了相应的开关策略。在LTspice中模拟了混合开关的开关损耗和电流分布。利用简化的仿真电路对混合开关不同开关策略的性能进行了评价，以证明混合开关策略的优越性。
The recently emerging SiC devices provide a promising solution to improve power converter efficiency and power density. However the expensive cost limited the widely use of SiC device. The parallel connection of SiC MOSFET and Si IGBT is introduced in this paper to utilize the advantage of this two different kinds of devices and proposed corresponding switching strategies. The switching loss and current distribution of hybrid switch is simulated in LTspice. Performances of different switching strategies for the hybrid switch are evaluated using a simplified simulation circuit to prove the advantage of hybrid and proposed switching strategies.