Disorder-dominated linear magnetoresistance in topological insulator Bi2Se3 thin films
Disorder-dominated linear magnetoresistance in topological insulator Bi2Se3 thin films
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DOI：
10.1063/1.5000880
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发表时间：
2017-12
影响因子：
4
通讯作者：
W. Wang;K. Gao;Q. Li;Zhi-Qing Li
中科院分区：
文献类型：
--
作者：
W. Wang;K. Gao;Q. Li;Zhi-Qing Li
The linear magnetoresistance (MR) effect is an interesting topic due to its potential applications. In topological insulator Bi2Se3, this effect has been reported to be dominated by the carrier mobility (μ) and hence has a classical origin. Here, we study the magnetotransport properties of Bi2Se3 thin films and observe the linear MR effect, which cannot be attributed to the quantum model. Unexpectedly, the linear MR does not show the linear dependence on μ, in conflict with the reported results. However, we find that the observed linear MR is dominated by the inverse disorder parameter 1/kFl, where kF and l are the Fermi wave vector and the mean free path, respectively. This suggests that its origin is also classical and that no μ-dominated linear MR effect is observed which may be due to the very small μ values in our samples.The linear magnetoresistance (MR) effect is an interesting topic due to its potential applications. In topological insulator Bi2Se3, this effect has been reported to be dominated by the carrier mobility (μ) and hence has a classical origin. Here, we study the magnetotransport properties of Bi2Se3 thin films and observe the linear MR effect, which cannot be attributed to the quantum model. Unexpectedly, the linear MR does not show the linear dependence on μ, in conflict with the reported results. However, we find that the observed linear MR is dominated by the inverse disorder parameter 1/kFl, where kF and l are the Fermi wave vector and the mean free path, respectively. This suggests that its origin is also classical and that no μ-dominated linear MR effect is observed which may be due to the very small μ values in our samples.
