Stress-strain engineering of single-crystalline silicon membranes by ion implantation: Towards direct-gap group-IV semiconductors
Stress-strain engineering of single-crystalline silicon membranes by ion implantation: Towards direct-gap group-IV semiconductors
复制标题
DOI：
10.1103/physrevmaterials.5.124603
复制
发表时间：
2021-12
影响因子：
3.4
通讯作者：
M. Masteghin;Vivian S. Tong;E. Schneider;Cameron C. L. Underwood;T. Peach;B. Murdin;R. Webb;S. Clowes;D. Cox
中科院分区：
文献类型：
--
作者：
M. Masteghin;Vivian S. Tong;E. Schneider;Cameron C. L. Underwood;T. Peach;B. Murdin;R. Webb;S. Clowes;D. Cox
