Toward temperature-insensitive near-infrared optical gain using low-toxicity Ag2Se quantum dots
Toward temperature-insensitive near-infrared optical gain using low-toxicity Ag2Se quantum dots
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DOI：
10.1039/d2nr01145j
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发表时间：
2022-07-04
期刊：
影响因子：
6.7
通讯作者：
Gu, Zixuan
中科院分区：
文献类型：
--
作者：
Liao, Chen;Tang, Luping;Gu, Zixuan
随着对高稳定性和高集成度激光器的需求不断增长，对温度不敏感的增益材料是非常需要的。在这里，温度不敏感的近红外（NIR）光学增益从低毒性的银硒量子点（QD）的报告。由于带边空穴态和下一态之间的大能量分裂（类似于430 meV），Ag2Se量子点中带边空穴态的热去布居被显著抑制。长的双激子寿命（245 ps，在300 K）的量子点是足以支持建立放大自发辐射（ASE）。因此，ASE阈值的特征温度的Ag2Se量子点薄膜是高达360 K，和有效的近红外ASE观察到高达340 K。此外，当温度低于200 K时，ASE峰位置对温度不敏感，因为声学声子不能被有效地激发。我们的研究结果表明，Ag2Se量子点可以用作环境友好的温度不敏感的近红外激光器的优良增益材料。
With the growing demand for developing lasers with high stability and integration, temperature-insensitive gain materials are highly desirable. Here, temperature-insensitive near-infrared (NIR) optical gain from low-toxicity Ag2Se quantum dots (QDs) is reported. Due to the large energy splitting between the band-edge hole state and the following state (similar to 430 meV), the thermal depopulation of the band-edge hole state in Ag2Se QDs is significantly suppressed. The long biexciton lifetime (245 ps at 300 K) of the QDs is sufficient to support the establishment of amplified spontaneous emission (ASE). Consequently, the characteristic temperature of the ASE threshold for the Ag2Se QD film is as high as 360 K, and efficient NIR ASE is observed up to 340 K. In addition, when the temperature is lower than 200 K, the ASE peak position is temperature insensitive because acoustic phonons cannot be effectively excited. Our findings reveal that Ag2Se QDs can be utilized as an excellent gain material for environmentally friendly temperature-insensitive NIR lasers.