Improved hot-electron reliability in strained-Si nMOS
Improved hot-electron reliability in strained-Si nMOS
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DOI：
10.1109/ted.2004.839871
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发表时间：
2004-11
影响因子：
3.1
通讯作者：
D. Onsongo;D. Kelly;S. Dey;R. Wise;C. Cleavelin;S. Banerjee
中科院分区：
文献类型：
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作者：
D. Onsongo;D. Kelly;S. Dey;R. Wise;C. Cleavelin;S. Banerjee
应变-Si/弛豫-Si/sub 1-x/Ge/sub x/结构提供了改善CMOS性能的可行手段。对于nMOS器件，弛豫Si/sub 1-x/Ge/sub x/上的假晶Si中的拉伸应变分裂导带最小值的六倍简并性，由于较低的面内有效质量和减少的谷间散射而呈现增加的电子迁移率。在本文中，除了确认双轴应变硅nMOS的增强性能，我们提出了热电子退化特性的第一次，显示出改善体硅。
Strained-Si/relaxed-Si/sub 1-x/Ge/sub x/ structures provide a viable means of improving CMOS performance. For nMOS devices, the tensile strain in pseudomorphic Si on relaxed-Si/sub 1-x/Ge/sub x/ splits the six-fold degeneracy of the conduction band minimum, rendering increased electron mobility due to a lower in-plane effective mass and reduced intervalley scattering. In this paper, in addition to confirming enhanced performance for biaxial-strained-Si nMOS, we present hot-electron degradation characteristics for the first time, showing improvement over bulk Si.