PHOTOCONDUCTIVITY OF ULTRATHIN ZINC-OXIDE FILMS
PHOTOCONDUCTIVITY OF ULTRATHIN ZINC-OXIDE FILMS
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DOI：
10.1143/jjap.33.6611
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发表时间：
1994-12-01
期刊：
影响因子：
--
通讯作者：
OHYA, Y
中科院分区：
文献类型：
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作者：
TAKAHASHI, Y;KANAMORI, M;OHYA, Y
在室温和不同气氛下，研究了用浸涂法在玻璃基片上制备的未掺杂和掺杂氧化锌薄膜的电学和光电性能。非掺杂薄膜的暗电导率随薄膜厚度的减小呈指数下降，而在350 nm光照射下的电导率几乎恒定在10（0）S。cm（-1），与膜厚度无关。因此，较薄的薄膜表现出较大的光响应比较厚的薄膜。这种厚度依赖性解释的ZnO颗粒尺寸与膜厚度的变化（细颗粒模型）和薄膜和金电极之间产生的肖特基势垒的附加效果。
Electrical and photoelectrical properties of nondoped and doped zinc oxide films coated on glass plates by the dip-coating method are investigated at room temperature in various ambient atmospheres. The dark conductivity of the nondoped films exponentially decreased with decreasing film thickness while the conductivity under illumination of 350 nm light was almost constant at 10(0) S . cm(-1) irrespective of the film thickness. Consequently thinner films showed larger photoresponse than thicker films. This thickness dependence is explained by the variation of ZnO particle size with the film thickness (fine particle model) and the additional effect of the Schottky barrier generated between the film and gold electrodes.