Microscopic structure of Er-related optically active centers in crystalline silicon.
Microscopic structure of Er-related optically active centers in crystalline silicon.
复制标题
晶体硅中铒相关光学活性中心的微观结构。
DOI：
10.1103/physrevlett.90.066401
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发表时间：
2003
影响因子：
8.6
通讯作者：
T. Gregorkiewicz
中科院分区：
文献类型：
--
作者：
N. Vinh;H. Przybylińska;Z. F. Krasil’nik;T. Gregorkiewicz
本文成功地观测和分析了掺Er分子束外延单晶硅中约1.54微米光致发光带的塞曼效应。主要光学活性中心的对称性最终确定为正交I(C(2v))，其g轴向约为18.39，g径向约为0。通过这种方式，解决了关于硅中光学活性Er相关中心的顺磁性的长期存在的难题。在本研究中证实了单一类型光学活性Er相关中心的优先产生对于Si：Er的光子应用是必不可少的。
A successful observation and analysis of the Zeeman effect on the lambda approximately 1.54 microm photoluminescence band in Er-doped crystalline MBE-grown silicon are presented. The symmetry of the dominant optically active centers is conclusively established as orthorhombic I(C(2v)) with g axially approximately 18.39 and g radially approximately 0. In this way the long standing puzzle as regards the paramagnetism of optically active Er-related centers in silicon is settled. Preferential generation of a single type of an optically active Er-related center confirmed in this study is essential for photonic applications of Si:Er.