Photomodulated reflectance and transmittance: optical characterisation of novel semiconductor materials and device structures
Photomodulated reflectance and transmittance: optical characterisation of novel semiconductor materials and device structures
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DOI：
10.1016/j.tsf.2003.10.041
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发表时间：
2004-02-22
期刊：
影响因子：
2.1
通讯作者：
Sitarek, P
中科院分区：
文献类型：
--
作者：
Misiewicz, J;Sek, G;Sitarek, P
在反射和透射模式下的光调制光谱学在这里被提出作为一种强大的非破坏性光学技术，用于调查新半导体材料和复杂的微米和纳米结构的基本物理特性。展示了光反射和光透射在多种半导体结构中的应用能力。讨论了以下几个方面：（1）通过选择抽运光的波长，分离样品不同深度的光学响应和内建电场的确定;（2）通过应用快速傅里叶变换，研究δ掺杂结构中的电场;（3）纤锌矿GaN外延层中与带隙相关的跃迁的电子浓度依赖性;（4）在1.5-2 μ m光谱范围内用于研究InGaSb/GaSb量子威尔斯的不同光谱技术的比较;（5）InGaAsP/InP 1.55 μ m激光器结构中的量子阱混合效应;（6）自组装量子点的光调制光谱。(C)2003年Elsevier B.X. All rights reserved.
Photomodulation spectroscopy, in reflection and transmission modes, is presented here as a powerful non-destructive optical technique for the investigation of fundamental physical properties of new semiconductor materials and complex micro- and nano-structures. The abilities of photoreflectance and phototransmittance in application to many kinds of semiconductor structures are demonstrated. The following aspects are discussed: (1) separation of the optical response and built-in electric field determination in different depths of the sample by a selection of the pump beam wavelength; (2) electric field in delta-doped structures by an application of a fast Fourier transformation; (3) electron concentration dependence of the band gap related transitions in wurtzite GaN epitaxial layers; (4) comparison of different spectroscopic techniques used for investigations of InGaSb/GaSb quantum wells within 1.5-2 mum spectral region; (5) quantum well intermixing effects in InGaAsP/InP 1.55-mum laser structures; (6) photomodulation spectroscopy of self-assembled quantum dots. (C) 2003 Elsevier B.X. All rights reserved.