High-throughput solution processing of large-scale graphene
High-throughput solution processing of large-scale graphene
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DOI：
10.1038/nnano.2008.329
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发表时间：
2009-01-01
影响因子：
38.3
通讯作者：
Kaner, Richard B.
中科院分区：
文献类型：
--
作者：
Tung, Vincent C.;Allen, Matthew J.;Kaner, Richard B.
石墨烯的电子性质，例如高电荷载流子浓度和迁移率，使其成为下一代纳米电子器件的有希望的候选者（1-3）。特别是，电子和空穴可以在石墨烯中进行亚微米级的弹道传输，并且不会受到当前MOSFET技术的规模限制（2，3）。然而，仍然难以生产石墨烯的单层样品（1，3），并且尽管付出了艰苦的努力来开发可规模化的生产方法（4，5），但尚未实现批量加工。在这里，我们报告了一个多功能的解决方案为基础的过程中，大规模生产的单层化学转化的石墨烯在整个面积的硅/SiO2晶片。通过将氧化石墨纸分散在纯联氨中，我们能够去除氧官能度并恢复单片的平面几何形状。所生产的化学转化的石墨烯片具有迄今为止报道的最大面积（高达20 × 40 μ m），使其更容易加工。场效应器件已经通过传统的光刻法制造，显示的电流比以前报道的化学生产的石墨烯高三个数量级（6）。这些片材的尺寸使广泛的表征技术，包括光学显微镜，扫描电子显微镜和原子力显微镜，在同一试样上进行。
The electronic properties of graphene, such as high charge carrier concentrations and mobilities, make it a promising candidate for next-generation nanoelectronic devices(1-3). In particular, electrons and holes can undergo ballistic transport on the sub-micrometre scale in graphene and do not suffer from the scale limitations of current MOSFET technologies(2,3). However, it is still difficult to produce single-layer samples of graphene(1,3) and bulk processing has not yet been achieved, despite strenuous efforts to develop a scalable production method(4,5). Here, we report a versatile solution-based process for the large-scale production of single-layer chemically converted graphene over the entire area of a silicon/SiO2 wafer. By dispersing graphite oxide paper in pure hydrazine we were able to remove oxygen functionalities and restore the planar geometry of the single sheets. The chemically converted graphene sheets that were produced have the largest area reported to date (up to 20 x 40 mu m), making them far easier to process. Field-effect devices have been fabricated by conventional photolithography, displaying currents that are three orders of magnitude higher than previously reported for chemically produced graphene(6). The size of these sheets enables a wide range of characterization techniques, including optical microscopy, scanning electron microscopy and atomic force microscopy, to be performed on the same specimen.