OPC for curved designs in application to photonics on silicon
OPC for curved designs in application to photonics on silicon
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用于硅光子学应用中曲面设计的 OPC
DOI：
10.1117/12.2230400
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
P. Schiavone
中科院分区：
文献类型：
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作者：
B. Orlando;V. Farys;L. Schneider;S. Crémer;S. Postnikov;M. Milléquant;Mathieu Dirrenberger;C. Tiphine;S. Bayle;C. Tranquillin;P. Schiavone
如今，硅基光电子设备的设计依赖于非曼哈顿的特征，如曲线和各种角度，最小特征尺寸低于100纳米。这类器件的工业制造需要使用193 nm光刻的优化工艺窗口。因此，需要采用通常用于CMOS制造的分辨率增强技术(RET)。然而，大多数RET算法是基于曼哈顿碎裂(0°、45°和90°)的，这会在用于光子设计的掩模上产生大的CD色散。光子设计的RET解决方案的工业实现是具有挑战性的，因为目前可用的大多数OPC工具都是面向CMOS的。RET技术从设计到最终结果的偏差可能会导致光子器件性能下降。我们提出了一种新的大小调整算法，允许调整设计边缘片段，同时保持原始结构的拓扑。本文将讨论该算法在基于规则的大小调整、SRAF布局和基于模型的校正中的实现结果。基于该算法的校正在实际光电子学器件上得到了应用和表征。实验结果验证了所提出的校正方法在Aselta Nanogics的InScale软件中的有效性。
Today's design for photonics devices on silicon relies on non-Manhattan features such as curves and a wide variety of angles with minimum feature size below 100nm. Industrial manufacturing of such devices requires optimized process window with 193nm lithography. Therefore, Resolution Enhancement Techniques (RET) that are commonly used for CMOS manufacturing are required. However, most RET algorithms are based on Manhattan fragmentation (0°, 45° and 90°) which can generate large CD dispersion on masks for photonic designs. Industrial implementation of RET solutions to photonic designs is challenging as most currently available OPC tools are CMOS-oriented. Discrepancy from design to final results induced by RET techniques can lead to lower photonic device performance. We propose a novel sizing algorithm allowing adjustment of design edge fragments while preserving the topology of the original structures. The results of the algorithm implementation in the rule based sizing, SRAF placement and model based correction will be discussed in this paper. Corrections based on this novel algorithm were applied and characterized on real photonics devices. The obtained results demonstrate the validity of the proposed correction method integrated in Inscale software of Aselta Nanographics.