Layer-by-layer assembly of nanowires for three-dimensional, multifunctional electronics
Layer-by-layer assembly of nanowires for three-dimensional, multifunctional electronics
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DOI：
10.1021/nl063056l
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发表时间：
2007-03-01
期刊：
影响因子：
10.8
通讯作者：
Lieber, Charles M.
中科院分区：
文献类型：
--
作者：
Javey, Ali;Nam, SungWoo;Lieber, Charles M.
我们报告了一种基于纳米线（NW）构建块逐层组装的三维（3D）多功能电子器件的一般方法。使用锗/硅（Ge/Si）核/壳NW作为代表性示例，制造多NW场效应晶体管（FET）的十个垂直堆叠层。传输测量表明，Ge/Si NW FET在给定器件层内具有可再现的高性能器件特性，FET特性不受顺序堆叠的影响，并且重要的是，在3D结构的顺序层1至10中实现了均匀的性能。五层单NW FET结构也通过从低密度生长衬底印刷Ge/Si NW来制备，并且传输测量显示层1和5中的FET具有类似的高性能特性。此外，3D多功能电路被证明在塑料基板上与反相器逻辑门和浮栅存储元件的顺序层。值得注意的是，电特性研究显示NW浮栅存储器元件的稳定写入和擦除，并证明对于高达至少50 MHz的频率具有大于单位增益的信号反转。组装不同类型的基于NW的器件的可重复顺序层的能力与NW构建块的宽度相结合，应该能够在未来组装越来越复杂的多层和多功能3D电子器件。
We report a general approach for three-dimensional (3D) multifunctional electronics based on the layer-by-layer assembly of nanowire (NW) building blocks. Using germanium/silicon (Ge/Si) core/shell NWs as a representative example, ten vertically stacked layers of multi-NW field-effect transistors (FETs) were fabricated. Transport measurements demonstrate that the Ge/Si NW FETs have reproducible high-performance device characteristics within a given device layer, that the FET characteristics are not affected by sequential stacking, and importantly, that uniform performance is achieved in sequential layers 1 through 10 of the 3D structure. Five-layer single-NW FET structures were also prepared by printing Ge/Si NWs from lower density growth substrates, and transport measurements showed similar high-performance characteristics for the FETs in layers 1 and 5. In addition, 3D multifunctional circuitry was demonstrated on plastic substrates with sequential layers of inverter logical gates and floating gate memory elements. Notably, electrical characterization studies show stable writing and erasing of the NW floating gate memory elements and demonstrate signal inversion with larger than unity gain for frequencies up to at least 50 MHz. The ability to assemble reproducibly sequential layers of distinct types of NW-based devices coupled with the breadth of NW building blocks should enable the assembly of increasing complex multilayer and multifunctional 3D electronics in the future.