MoS2 Field-Effect Transistors With Lead Zirconate-Titanate Ferroelectric Gating
MoS2 Field-Effect Transistors With Lead Zirconate-Titanate Ferroelectric Gating
复制标题
具有锆钛酸铅铁电门控的 MoS2 场效应晶体管
DOI：
10.1109/led.2015.2440249
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发表时间：
2015-08-01
影响因子：
4.9
通讯作者：
Zhu, Hong-Wei
中科院分区：
文献类型：
--
作者：
Zhang, Xiao-Wen;Xie, Dan;Zhu, Hong-Wei
我们报道了由锆钛酸铅（PZT）铁电门控的具有少层二硫化钼纳米片的背栅场效应晶体管（FET）。具有PZT门控的MoS 2晶体管（MoS 2-PZT FET）表现出可再现的滞后和高稳定性的非易失性存储行为，这可以归因于界面吸附物的极化屏蔽和电荷动态捕获/脱陷到界面缺陷态。沟道尺寸从2 μ m到200 nm，MOS器件的通断态比和存储窗口变化不大，说明沟道尺寸对MOS器件的性能没有明显影响，表明MOS器件是一种很有前途的非易失性存储器件。
We report back gate field-effect transistors (FETs) with few-layered MoS2 nanosheet controlled by lead-zirconate-titanate (PZT) ferroelectric gating. The MoS2 transistors with PZT gating (MoS2-PZT FETs) exhibit reproducible hysteresis and nonvolatile memory behaviors with high stability, which can be attributed to the polarization screening from interface adsorbates and charge dynamic trapping/detrapping into the interface defect states. The ON/OFF states ratios and memory windows have little change with the channel scaling from 2 mu m to 200 nm, revealing the channel scaling has not obvious influence on MoS2-PZT FET properties, which suggests MoS2-PZT FET a promising candidate for future non-volatile memory applications.