Interfacial design of Cu-based composites prepared by powder metallurgy for heat sink applications
Interfacial design of Cu-based composites prepared by powder metallurgy for heat sink applications
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DOI：
10.1016/j.msea.2006.12.146
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发表时间：
2008-02-25
期刊：
影响因子：
6.4
通讯作者：
Kieback, B.
中科院分区：
文献类型：
--
作者：
Schubert, Th.;Trindade, B.;Kieback, B.
随着电子工业的不断发展，散热对电子元器件的可靠性变得越来越重要。因此，有效的热管理是高性能半导体封装的关键问题。理想的散热和散热材料应具有(4-8)×10(-6)K-1的热膨胀系数和较高的导热系数。金属基复合材料提供了通过添加适当的增强相来调整金属性能和满足热管理要求的可能性。铜/碳化硅和铜/金刚石复合材料已通过粉末冶金方法制备。开发铜/碳化硅材料的主要挑战是界面相互作用的控制。在制备铜/碳化硅所需的温度下，碳化硅在铜中不稳定。众所周知，在铜/金刚石复合材料中，金刚石与铜之间的结合很弱。通过在碳化硅粉末表面气相沉积钼来控制界面反应，使用雾化的铜(X)合金和少量的碳化物形体(如X=Cr，B)来改善铜-金刚石复合材料的界面结合，从而提高了复合材料的结合强度和热物理性能。(C)2007 Elsevier B.V.保留所有权利。
Thermal aspects are becoming increasingly important for the reliability of the electronic components due to the continuous progress of the electronic industries. Therefore, the effective thermal management is a key issue for packaging of high performance semiconductors. The ideal material working as heat sink and heat spreader should have a CTE of (4-8) x 10(-6) K-1 and a high thermal conductivity. Metal matrix composites offer the possibility to tailor the properties of a metal by adding an appropriate reinforcement phase and to meet the demands in thermal management.Copper/SiC and copper/diamond composites have been produced by powder metallurgy. The major challenge in development of Cu/SiC is the control of the interfacial interactions. Silicon carbide is not stable in copper at the temperature needed for the fabrication of Cu/SiC. It is known that the bonding between diamond and copper is very weak in the Cu/diamond composite. Improvements in bonding strength and thermo-physical properties of the composites have been achieved bya vapour deposited molybdenum coating on SiC powders to control interface reactions,using atomized Cu(X) alloys with minor additions of carbide formers, e.g. X = Cr, B, to improve the interfacial bonding in Cu-diamond composites. (C) 2007 Elsevier B.V. All rights reserved.