Impact of inserted Ta ultrathin layer and postdeposition annealing on the forming voltage of Ir/Ti/Ta/HfO2/TiN/Ti/SiO2/Si resistive switching devices
Impact of inserted Ta ultrathin layer and postdeposition annealing on the forming voltage of Ir/Ti/Ta/HfO2/TiN/Ti/SiO2/Si resistive switching devices
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DOI：
10.7567/jjap.54.04dd10
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发表时间：
2015-03
影响因子：
1.5
通讯作者：
S. Asanuma;H. Shima;Masashi Yamazaki;Kazumi Hayama;N. Hata;H. Akinaga
中科院分区：
文献类型：
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作者：
S. Asanuma;H. Shima;Masashi Yamazaki;Kazumi Hayama;N. Hata;H. Akinaga
采用磁控溅射方法制备了不同Ta和Ti层厚度的Ir/Ti/Ta/HfO 2/TiN/Ti/SiO2/Si结构的阻变（RS）器件。当Ti和Ta层厚度的组合为Ti（45 nm）/Ta（5 nm）并且在沉积顶部电极之后对器件进行退火时，观察到形成电压的降低。在该样品中，通过二次离子质谱测量确认了热退火时氧离子从HfO 2层通过Ta层迁移到Ti层。基于形成电压对上电极厚度组合的依赖性以及有无沉积后退火，我们讨论了一种在不改变金属电极和氧化层的材料组合的情况下更有效地减少氧化层的方法。
We fabricated resistive switching (RS) devices that possess the Ir/Ti/Ta/HfO2/TiN/Ti/SiO2/Si structure with different Ta and Ti layer thicknesses by a magnetron sputtering method. The lowering of forming voltage was observed when the combination of Ti and Ta layer thicknesses was Ti (45 nm)/Ta (5 nm) and the device was annealed after the deposition of the top electrode. In this sample, the migration of oxygen ions from the HfO2 layer to the Ti layer through the Ta layer upon thermal annealing was confirmed by secondary ion mass spectroscopy measurements. On the basis of the dependence of the forming voltage on the combination of the top electrode thicknesses and the presence or absence of postdeposition annealing, we discuss a method of reducing the oxide layer more effectively without changing the material combination of the metal electrode and the oxide layer.