A 24‐GHz active SPST MMIC switch with INGAP/GAAS HBTS
A 24‐GHz active SPST MMIC switch with INGAP/GAAS HBTS
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具有 INGAP/GAAS HBTS 的 24 GHz 有源 SPST MMIC 开关
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
Songcheol Hong
中科院分区：
文献类型：
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作者：
Jong‐Ryul Yang;Dong;Songcheol Hong
采用InGaP/GaAs HBT工艺设计了一款24 GHz高隔离度单刀单掷（SPST）开关。为了在关断状态下获得高隔离，利用共源共栅结构，并且在输出中引入附加的分流晶体管，这有助于抑制泄漏信号。采用虚级联结构作为电流导引电路，以实现输入匹配和短上升/下降时间。所制作的SPST开关在22.8 GHz和24 GHz下的有效隔离度分别为1.52 dB和41 dB。© 2008 Wiley Periodicals，Inc. Microwave Opt Technol Lett 50：2155-2158，2008;在线发表于Wiley InterScience（www.interscience.wiley.com）。DOI 10.1002/mop.23606
A 24‐GHz single‐pole, single‐throw (SPST) switch with high isolation is designed using InGaP/GaAs HBT process. To obtain high isolation in an off state, cascode structures are utilized and an additional shunt transistor is introduced in an output, which helps to reject a leakage signal. Dummy cascode structure is used as a current steering circuit for input matching and short rise/fall time. The fabricated SPST switch shows an effective isolation of ∼52 dB at 22.8 GHz and 41 dB at 24 GHz. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2155–2158, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23606