Interaction between in-gap states and carriers at the conductive interface between perovskite oxides
Interaction between in-gap states and carriers at the conductive interface between perovskite oxides
复制标题
钙钛矿氧化物之间导电界面处的带内态和载流子之间的相互作用
DOI：
10.1088/1361-648x/aadd33
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Nie J. C.
中科院分区：
文献类型：
--
作者：
Li C. J.;Jiang W. M.;Liu M. R.;Hong Y. P.;Xue H. X.;Meng J. C.;Zhang Z.;Li Y. C.;Liu K. J.;He L.;Dou R. F.;Xiong C. M.;Nie J. C.
研究了SrTiO3/NdGaO3 （STO/NGO）和非晶laalo3 /SrTiO3/NdGaO3 （a-LAO/STO/NGO）异质结的二维电子系统。间隙态（IGSs）与载流子之间存在明显的相互作用。IGSs可以捕获大量载流子，增强载流子散射。由于STO中IGSs的高密度，导致STO/NGO的导电性严重减弱。然而，对于a-LAO/STO/NGO异质结，高载流子密度可以通过静电屏蔽效应降低IGSs的影响。IGSs之间的竞争和载流子的筛选效应导致了绝缘体-金属转变和载流子密度对温度的奇异依赖。我们还从理论上探讨了IGSs与载流子之间的相互作用。提出了一种数学描述，计算结果与实验结果吻合较好。
The 2D electron systems of SrTiO3/NdGaO3 (STO/NGO) and amorphous-LaAlO3/SrTiO3/NdGaO3 (a-LAO/STO/NGO) heterojunctions were explored. An obvious interaction between in-gap states (IGSs) and carriers was found. The IGSs can trap a large number of carriers and enhance carrier scattering. As a result of the high density of IGSs in STO, the conductivity of STO/NGO was severely weakened. However, for a-LAO/STO/NGO heterojunctions, the high carrier density can reduce the effect of IGSs through the electrostatic screening effect. The competition between IGSs and the screening effect of carriers results in an insulator–metal transition and a strange temperature dependence of carrier density. We also explored the interaction between IGSs and carriers theoretically. A mathematical description was proposed and the calculated results showed good agreement with experimental findings.