Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage
Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage
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DOI：
10.1063/1.1346622
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发表时间：
2001-02
影响因子：
4
通讯作者：
A. Zhang;J. W. Johnson;F. Ren;J. Han;A. Polyakov;N. B. Smirnov;A. Govorkov;J. Redwing;K. Lee;S. Pearton
中科院分区：
文献类型：
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作者：
A. Zhang;J. W. Johnson;F. Ren;J. Han;A. Polyakov;N. B. Smirnov;A. Govorkov;J. Redwing;K. Lee;S. Pearton
AlxGa 1 −xN（x=0-0.25）肖特基整流器采用横向几何结构，采用p+注入保护环和整流接触重叠在SiO2钝化层上。反向击穿电压（VB）随肖特基接触和欧姆接触间距的增加而增加，当间隙间距为100 μm时，Al 0.25Ga 0.75N和GaN的反向击穿电压分别达到9700 V和6350 V。假设横向耗尽，这些值对应的击穿场强为1.967 ×105 V cm-1，这大约是体GaN理论最大值的20倍。所有器件的品质因数（VB）2/罗恩（其中罗恩是导通电阻）在94-268 MW cm-2范围内。
AlxGa1−xN (x=0–0.25) Schottky rectifiers were fabricated in a lateral geometry employing p+-implanted guard rings and rectifying contact overlap onto an SiO2 passivation layer. The reverse breakdown voltage (VB) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al0.25Ga0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ⩽9.67×105 V cm−1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (VB)2/RON, where RON is the on-state resistance, was in the range 94–268 MW cm−2 for all the devices.