Tuning Methods for Semiconductor Spin Qubits
Tuning Methods for Semiconductor Spin Qubits
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DOI：
10.1103/physrevapplied.10.054026
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发表时间：
2018-11-09
影响因子：
4.6
通讯作者：
Bluhm, Hendrik
中科院分区：
文献类型：
--
作者：
Botzem, Tim;Shulman, Michael D.;Bluhm, Hendrik
我们提出了可靠地表征和调谐栅定义半导体自旋量子比特的有效方法。我们的方法是针对GaAs异质结构中的双量子点而开发的，但它们可以很容易地适用于其他基于量子点的量子比特系统。这些调谐过程包括表征点间隧道耦合、到周围引线的隧道耦合以及识别用于量子比特操作的各种快速初始化点。由于基于半导体的自旋量子比特与标准的半导体工艺技术兼容，因此具有良好的可扩展性，因此，一旦达到多量子比特阶段，高效调谐量子点参数的挑战只会在不久的将来增加。由于预期将被用作未来自动调整协议的基础，这里提供的所有测量都是快速执行和易于分析的表征方法。它们可以在几秒钟内对相关的量子比特参数进行定量测量，并且几乎不需要人为干预。
We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are developed for double quantum dots in GaAs heterostructures, but they can easily be adapted to other quantum-dot-based qubit systems. These tuning procedures include the characterization of the interdot tunnel coupling, the tunnel coupling to the surrounding leads, and the identification of various fast initialization points for the operation of the qubit. Since semiconductor-based spin qubits are compatible with standard semiconductor process technology and hence promise good prospects of scalability, the challenge of efficiently tuning the dot's parameters will only grow in the near future, once the multiqubit stage is reached. With the anticipation of being used as the basis for future automated tuning protocols, all measurements presented here are fast-to-execute and easy-to-analyze characterization methods. They result in quantitative measures of the relevant qubit parameters within a couple of seconds and require almost no human interference.