High-mobility C60 field-effect molecular-wetting controlled transistors fabricated on substrates
High-mobility C60 field-effect molecular-wetting controlled transistors fabricated on substrates
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DOI：
10.1002/adma.200502752
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发表时间：
2006-07-04
影响因子：
29.4
通讯作者：
Koinuma, Hideomi
中科院分区：
文献类型：
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作者：
Itaka, Kenji;Yamashiro, Mitsugu;Koinuma, Hideomi
原子级平坦的并五苯单分子层显着提高了 C-60 薄膜的结晶度，从而增强了 C-60 晶体管 (FET) 的场效应迁移率（见图）。与使用没有并五苯缓冲剂生长的 C-60 薄膜的器件相比，它们的性能提高了四到五倍。因此，分子润湿控制基底可以为高性能晶体有机器件的制造提供通用解决方案。
An atomically flat pentacene monomolecular layer remarkably improved the crystallinity of C-60 films, thus enhancing the field-effect mobilities in C-60 transistors (FETs) (see figure). They showed a four to five times better performance over devices with C-60 films grown without a pentacene buffer. Molecular-wetting-controlled substrates can thus offer a general solution to the fabrication of high-performance crystalline organic devices.