15.1 mW 60 ghz up-conversion mixer with 4.5 dB gain and 57.5 dB LO-RF isolation

15.1 mW 60 ghz up-conversion mixer with 4.5 dB gain and 57.5 dB LO-RF isolation
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DOI:
10.1049/el.2012.1594
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发表时间:
2012-07
影响因子:
1.1
通讯作者:
T. Tsai;Y. Lin
T. Tsai;Y. Lin
中科院分区:
工程技术4区
文献类型:
--
作者:
T. Tsai;Y. Lin

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介绍了一种采用标准90纳米CMOS技术的低功耗、高转换增益(CG) 60 GHz上转换混频器。上转换混频器包括一种新型双平衡吉尔伯特单元,具有用于CG增强的负电阻补偿,一种用于将单个LO输入信号转换为差分信号的马尔尚平衡器,以及另一种用于将差分RF输出信号转换为单个信号的马尔尚平衡器。上转换混频器的功耗为15.1 mW,在0.1 GHz时中频端口输入反射系数(Γ in)为236.7 dB,在59.9 GHz时lo端口Γ in为213.1 dB,在60 GHz时rf端口Γ in为228.8 dB。在0.1 GHz的中频和60 GHz的射频下,上转换混频器实现了4.5 dB的CG和57.5 dB的LO-RF隔离,这是迄今为止报道的60 GHz CMOS上转换混频器中最好的CG和隔离结果之一。
A low-power and high conversion gain (CG) 60 GHz up-conversion mixer using standard 90 nm CMOS technology is demonstrated. The up-conversion mixer comprises a novel double-balanced Gilbert cell with negative resistance compensation for CG enhancement, a Marchand balun for converting the single LO input signal to a differential signal, and another Marchand balun for converting the differential RF output signal to a single signal. The up-conversion mixer consumes 15.1 mW and achieves IF-port input reflection coefficient (Γ in ) of 236.7 dB at 0.1 GHz, LO-port Γ in of 213.1 dB at 59.9 GHz, and RF-port Γ in of 228.8 dB at 60 GHz. At IF of 0.1 GHz and RF of 60 GHz, the up-conversion mixer achieves CG of 4.5 dB and LO-RF isolation of 57.5 dB, one of the best CG and isolation results ever reported for a 60 GHz CMOS up-conversion mixer.